Default Factors for Gamma ( g i,p and g k,i,p ) for Semiconductor Manufacturing and for MEMS and PV Manufacturing Under Certain Conditions * for Use With the Stack Testing Method

Table I-18 to Subpart I of Part 98—Default Factors for Gamma (g i,p and g k,i,p ) for Semiconductor Manufacturing and for MEMS and PV Manufacturing Under Certain Conditions * for Use With the Stack Testing Method Process type In-situ thermal or in-situ plasma cleaning Remote plasma cleaning Gas CF 4 C 2 F 6 c-C 4 F 8 NF 3 SF 6 C 3 F 8 CF 4 NF 3 If manufacturing wafer sizes ≤200 mm AND manufacturing 300 mm (or greater) wafer sizes g i 13 9.3 4.7 14 11 NA NA 5.7 g CF4,i NA 23 6.7 63 8.7 NA NA 58 g C2F6,i NA NA NA NA 3.4 NA NA NA g CHF3,i NA NA NA NA NA NA NA 0.24 g CH2F2,i NA NA NA NA NA NA NA 111 g CH3F,i NA NA NA NA NA NA NA 33 If manufacturing ≤200 mm OR manufacturing 300 mm (or greater) wafer sizes g i (≤ 200 mm wafer size) 13 9.3 4.7 2.9 11 NA NA 1.4 g CF4,i (≤200 mm wafer size) NA 23 6.7 110 8.7 NA NA 36 g C2F6,i (≤200 mm wafer size) NA NA NA NA 3.4 NA NA NA g i (300 mm wafer size) NA NA NA 26 NA NA NA 10 g CF4,i (300 mm wafer size) NA NA NA 17 NA NA NA 80 g C2F6,i (300 mm wafer size) NA NA NA NA NA NA NA NA g CHF3,i (300 mm wafer size) NA NA NA NA NA NA NA 0.24 g CH2F2,i (300 mm wafer size) NA NA NA NA NA NA NA 111 g CH3F,i (300 mm wafer size) NA NA NA NA NA NA NA 33 * If you manufacture MEMS or PVs and use semiconductor tools and processes, you may use the corresponding g in this table. For all other tools and processes, a default g of 10 must be used. [89 FR 31922, Apr. 25, 2024]